UPD431000AGW-70L-E1-A

Product Overview

The UPD431000AGW-70L-E1-A from Renesas Electronics Corporation is a volatile SRAM memory IC organized as 128K x 8 for a total of 1 Mbit. It uses a single-port asynchronous architecture with a parallel interface and a 70 ns access time. The device operates from a 4.5 V to 5.5 V supply and is offered in a surface-mount 32-SOP package, also described as a 32-SOIC with 0.445 in (11.30 mm) width. Its specified operating temperature range is 0°C to 70°C.

Key Features

• 1 Mbit volatile SRAM with a 128K x 8 organization.
• Single-port asynchronous memory architecture with a parallel interface.
• 70 ns access time and 70 ns write cycle time.
• 4.5 V to 5.5 V supply voltage range.
• 0°C to 70°C operating temperature range.
• Surface-mount 32-SOP / 32-SOIC package with 0.445 in (11.30 mm) width.

Applications

• Embedded controller boards requiring parallel-addressed volatile storage.
• Data buffering subsystems in logic designs with asynchronous memory access.
• Memory expansion for systems constrained to a single-port SRAM interface.

Design & Procurement Notes

When selecting this SRAM, verify that the board supply can maintain 4.5 V to 5.5 V and that the operating environment remains within 0°C to 70°C. The 32-SOP surface-mount package has a 32-SOIC body width of 0.445 in (11.30 mm), so layout, soldering, and mechanical clearance should match that footprint. The 70 ns access and write-cycle timing, 128K x 8 organization, and single-port asynchronous parallel interface should be checked against the host controller or memory bus requirements. Because the memory is volatile, retained data will be lost when supply is removed.