MT58L256V18F1T-10

Product Overview

The MT58L256V18F1T-10 from Micron Technology Inc. is a volatile synchronous SRAM device in the SYNCBURST™ series. It provides 4 Mbit of memory organized as 256K x 18 and uses a parallel memory interface. The device operates from a 3.135 V to 3.6 V supply and is specified for a 66 MHz clock frequency with a 10 ns access time. It is packaged in a 100-LQFP surface-mount package with a 100-TQFP (14x20.1) package outline.

Key Features

• 4 Mbit volatile SRAM memory capacity
• 256K x 18 memory organization
• Synchronous SRAM architecture with 66 MHz clock frequency
• 10 ns access time
• 3.135 V to 3.6 V supply voltage range
• 0°C to 70°C operating temperature range
• 100-LQFP surface-mount package with 100-TQFP (14x20.1) outline

Applications

• Volatile data buffering in systems using synchronous SRAM
• Parallel memory interface in designs with 18-bit wide data paths
• Synchronous memory access in embedded control equipment
• Memory expansion for systems requiring a 256K x 18 organization

Design & Procurement Notes

For board-level design, the 100-LQFP surface-mount package and 100-TQFP (14x20.1) outline should be accommodated in the footprint and thermal design. The 3.135 V to 3.6 V supply range and 0°C to 70°C operating temperature range define the power and thermal envelope for the device. The 66 MHz clock frequency, 10 ns access time, parallel interface, and 256K x 18 organization should be matched to the memory controller timing, bus width, and address mapping. Design documentation should reference the exact part number and package to maintain consistency across the memory subsystem.