MT53E256M16D1DS-046 AAT:B

Product Overview

The MT53E256M16D1DS-046 AAT:B from Micron Technology Inc. is a volatile DRAM memory IC using SDRAM - Mobile LPDDR4 technology. It has a 4Gbit memory array organized as 256M x 16, with a 2.133 GHz clock frequency and a 1.1V supply voltage. The device uses a 200-WFBGA package, specified as 10x14.5, for surface-mount assembly. It is Automotive grade, AEC-Q100 qualified, and has an operating temperature range of -40°C to 105°C (TC).

Key Features

• Volatile DRAM memory with 4Gbit capacity and 256M x 16 organization.
• Mobile LPDDR4 SDRAM technology with a 2.133 GHz clock frequency.
• 1.1V supply voltage.
• Automotive grade with AEC-Q100 qualification.
• Operating temperature range of -40°C to 105°C (TC).
• 200-WFBGA (10x14.5) surface-mount package.

Applications

• Mobile and embedded computing systems using LPDDR4 volatile memory for main or temporary data storage.
• Automotive electronic modules and in-vehicle infotainment systems that use AEC-Q100 qualified memory components.
• Surface-mount board designs requiring a 200-WFBGA (10x14.5) DRAM footprint for board-level memory placement.
• Embedded systems requiring 256M x 16 volatile memory access at 2.133 GHz.

Design & Procurement Notes

When selecting this part, verify that the board layout supports the 200-WFBGA (10x14.5) surface-mount footprint and that the system has a 1.1V supply rail. The 256M x 16 organization and 2.133 GHz clock frequency should be reviewed against the system memory interface requirements. Thermal design should account for the -40°C to 105°C (TC) operating range. For Automotive grade designs, AEC-Q100 qualification is a relevant selection criterion, while system-level environmental requirements should still be confirmed.