21N50ES
500V 21A N-channel MOSFET, low gate charge, high-speed switching, TO-3P/TO-220F package device
- 제품 카테고리
- MOSFET
- 패키지
- TO-220F
- 재고
- 1,500 개
- 공급 가능 여부
- 현재 수량은 확인이 필요합니다.
제품 특성
| 제조사 | Fuji Electric Co., Ltd. |
|---|---|
| 제품 카테고리 | MOSFET |
| Application | Welding power systems |
| Avalanche Capability | Yes (rugged design) |
| Body Diode | Fast intrinsic diode |
| Continuous Drain Current | 21A |
| Drain-Source voltage | 500V |
| Gate Charge (Qg) | Low gate charge (~70–100 nC class) |
| Gate-Source voltage | ±30V |
| Input Capacitance | ~2000–3000 pF |
| Manufacturer | Fuji Electric (FMH / FMV / FMR 21N50ES family) |
| Operating Junction Temperature | -55°C to +150°C |
| Output Capacitance | ~200–400 pF |
| Package Types | TO-3P / TO-220F / T-Pack variants |
| Power Dissipation | ~180–220W (package dependent) |
| Pulsed Drain Current | ~63A |
| RDS(on) | ~0.27Ω (typical max class) |
| Storage Temperature Range | -55°C to +150°C |
| Switching Speed | Fast switching optimized for SMPS |
| Technology | Super junction / high-voltage trench MOSFET |
| 데이터시트 | 데이터시트 요청 |
조달 개요
21N50ES의 주요 공급 및 구매 정보입니다.
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21N50ES 상세 설명
Product Overview
21N50ES is commonly associated with Fuji Electric FMH21N50ES, FMR21N50ES and FMV21N50ES Super FAP-E3 series N-channel silicon power MOSFETs. The device is designed for high-voltage switching applications and provides low power loss, low noise, low on-resistance, controllable switching dv/dt and reduced gate-source ringing behavior. With a 500V drain-source voltage rating and 21A current class, it is suitable for switching regulators, AC/DC power supplies, DC-DC converters, UPS systems, industrial power boards and maintenance or replacement projects.
Key Features
Manufacturer: Fuji Electric
Marking / Short Part Number: 21N50ES
Related Part Numbers: FMH21N50ES, FMR21N50ES, FMV21N50ES
Device Type: N-channel silicon power MOSFET
Product Category: Discrete semiconductor / high-voltage MOSFET
Series: Super FAP-E3 series
Drain-Source Voltage: 500V
Continuous Drain Current: 21A class
Gate-Source Voltage: ±30V maximum class
Power Dissipation: 285W class for FMH21N50ES version; package-dependent
Output Capacitance: 320pF class
Package Options: TO-3P, TO-220F and related Fuji power packages depending on full ordering code
Mounting Type: Through-hole mounting
Key Features: Low power loss, low noise, low on-resistance, controllable switching dv/dt and smaller gate-source ringing waveform
Typical Use: Switching regulators, UPS systems, DC-DC converters, AC/DC power supplies and high-voltage power switching circuits
Ordering / Packaging Note: 21N50ES may be used as a short reference or top marking for different Fuji Electric package versions; buyers should verify the full ordering code, package, pin configuration, marking and thermal rating before production use.
Applications
21N50ES can be used in electronic circuits that require high-voltage N-channel MOSFET switching performance. Typical applications include switching regulators, AC/DC switching power supplies, DC-DC converter stages, UPS power circuits, industrial control equipment, inverter auxiliary power stages, communication equipment power supplies, maintenance projects and repair applications. It is also suitable for BOM review where a 500V / 21A N-channel MOSFET in a Fuji Super FAP-E3 package option is required.
Quality & Sourcing
Antrex Electronics can support 21N50ES sourcing with stock availability checks, RFQ quotation, package confirmation, date code review and shipment arrangement. For project-based purchasing, buyers can provide quantity, target price, required date code, packaging requirements and application information for faster quotation support.
For quality control, Antrex Electronics can help arrange product photos, label review, visual inspection and third-party testing support when required. OEMs, EMS providers, repair centers and electronic component buyers are welcome to send BOM lists or hard-to-find part requests for sourcing assistance.
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