CY7C1049BV33-12VI

Product Overview

CY7C1049BV33-12VI from Cypress Semiconductor Corp is an asynchronous static random-access memory device with a volatile 4Mbit SRAM array organized as 512K x 8. The memory uses a parallel interface and is supplied in a 36-SOJ surface-mount package, with a 36-BSOJ case width of 0.400 in, 10.16 mm. Its access time and write cycle time are specified at 12 ns, and it operates from a 3 V to 3.6 V supply over an ambient temperature range of -40°C to 85°C.

Key Features

• 4Mbit volatile SRAM with a 512K x 8 organization.
• Asynchronous parallel memory interface with an 8-bit data width.
• 12 ns access time and 12 ns write cycle time.
• 3 V to 3.6 V supply range.
• -40°C to 85°C operating temperature range.
• 36-SOJ surface-mount package with 36-BSOJ case width 0.400 in, 10.16 mm.

Applications

• Embedded systems using volatile working memory for temporary runtime data.
• Parallel-bus systems using SRAM as a data buffer.
• Instrumentation and control boards storing captured samples temporarily.
• Development or test platforms using 8-bit wide SRAM scratch memory.

Design & Procurement Notes

Design reviews should confirm that the board supply remains within 3 V to 3.6 V and that the ambient operating environment stays between -40°C and 85°C. The 512K x 8 organization and parallel interface require a memory controller or host bus that can address 512K locations and exchange 8-bit data words. The 12 ns access and write cycle times should be checked against the controller timing budget. Because the memory is volatile, data is retained only while power is applied. Layout and procurement planning should account for the 36-SOJ surface-mount package and the 36-BSOJ case width of 0.400 in, 10.16 mm.