CY7C1049BV33-12VCT

Product Overview

The CY7C1049BV33-12VCT from Cypress Semiconductor Corp is a volatile asynchronous SRAM memory IC with 4 Mbit capacity organized as 512K x 8. It uses a parallel interface, with a 12 ns access time and 12 ns write cycle time. The device operates from a 3.0 V to 3.6 V supply and uses a surface-mount 36-SOJ package, 0.400 in (10.16 mm) wide, with an operating temperature range of 0°C to 70°C (TA).

Key Features

• Volatile SRAM memory format
• Asynchronous memory technology
• 4 Mbit capacity with 512K x 8 organization
• Parallel memory interface
• 12 ns access time and 12 ns write cycle time
• 3.0 V to 3.6 V supply voltage
• Surface-mount 36-SOJ package, 0.400 in (10.16 mm) wide
• 0°C to 70°C operating temperature range

Applications

• Volatile data storage in 3.0 V to 3.6 V electronic assemblies
• Temporary buffering for byte-wide parallel memory access
• Memory expansion in designs operating within 0°C to 70°C ambient temperature

Design & Procurement Notes

When integrating the CY7C1049BV33-12VCT, verify that the system supply remains within 3.0 V to 3.6 V and that the host controller can drive a parallel memory bus with timing compatible with the 12 ns access and write-cycle specifications. The 512K x 8 organization requires address decoding for 512K byte locations and eight data lines. Confirm the 36-SOJ surface-mount footprint and 0.400 in (10.16 mm) body width during PCB layout. Match the 0°C to 70°C operating range to the expected ambient environment. During selection, confirm that the 512K x 8 address space fits the intended memory map and that the 12 ns timing is compatible with the system bus cycle.