CY7C1006B-15VCT

Product Overview

The CY7C1006B-15VCT from Cypress Semiconductor Corp is an asynchronous parallel SRAM device with 1 Mbit of volatile memory organized as 256K x 4. It uses a 28-SOJ surface-mount package with a 28-BSOJ body width of 0.300 inches (7.62 mm). The device operates from a 4.5 V to 5.5 V supply and is specified for an ambient temperature range of 0 °C to 70 °C. Both the access time and the word/page write cycle time are 15 ns, supporting parallel memory interfacing in systems that require temporary, power-dependent storage.

Key Features

• 1 Mbit volatile SRAM memory with a 256K x 4 organization.
• Asynchronous parallel memory interface with 15 ns access time.
• 15 ns word and page write cycle time.
• Supply voltage range of 4.5 V to 5.5 V.
• Operating ambient temperature range of 0 °C to 70 °C.
• Surface-mount 28-SOJ package, 28-BSOJ, 0.300 inch (7.62 mm) width.

Applications

• Volatile memory expansion for embedded controllers and processor systems using a parallel SRAM interface.
• Temporary buffering of measurement or control data in powered electronic assemblies.
• Scratch-pad storage for runtime variables and lookup tables.
• Memory staging for runtime configuration data while the system is powered.

Design & Procurement Notes

Design considerations should focus on the 4.5 V to 5.5 V supply range, the 28-SOJ surface-mount footprint, and the 0 °C to 70 °C ambient operating range. Because the device is asynchronous and uses a parallel interface, system timing should be checked against the 15 ns access and write cycle specifications. The 256K x 4 organization affects address and data bus planning, and the volatile SRAM format means data is retained only while the device is powered. Procurement should confirm that the 28-BSOJ package width of 0.300 inches (7.62 mm) matches the intended board layout and assembly process.