CY62146DV30LL-55ZSXIT

Product Overview

The CY62146DV30LL-55ZSXIT from Cypress Semiconductor Corp is a volatile SRAM memory IC in the MOBL series. It provides a 4 Mbit memory size organized as 256K x 16, using a parallel interface and asynchronous SRAM technology. The device offers a 55 ns access time and a 55 ns word or page write cycle time. It operates from a 2.2 V to 3.6 V supply and over an ambient temperature range of -40°C to 85°C. The part uses a surface-mount 44-TSOP II package with a 0.400 inch, 10.16 mm width.

Key Features

• 4 Mbit volatile SRAM memory with a 256K x 16 organization for parallel data storage.
• Asynchronous SRAM technology with a 55 ns access time and 55 ns word or page write cycle time.
• Parallel memory interface with a 16-bit organization.
• 2.2 V to 3.6 V supply voltage range.
• Surface-mount 44-TSOP II package with 0.400 inch, 10.16 mm width.
• Operating temperature range of -40°C to 85°C (TA).

Applications

• Buffering transient data in embedded systems that require direct SRAM access.
• Staging lookup tables or working data for systems using a parallel memory interface.
• Memory expansion in surface-mount designs where a 4 Mbit volatile SRAM is needed.

Design & Procurement Notes

When selecting CY62146DV30LL-55ZSXIT, verify that the system provides a 2.2 V to 3.6 V supply and supports a parallel SRAM interface. The 55 ns access and write cycle timing should be checked against the controller's read and write requirements. The 256K x 16 organization means the memory is addressed in 16-bit words, so host data width and address mapping should match. The 44-TSOP II surface-mount package requires appropriate pad layout and thermal clearance within the -40°C to 85°C ambient range. Since the memory is volatile, data retention depends on continuous supply.