CY62136FV30LL-45BVXI

Product Overview

The CY62136FV30LL-45BVXI from Cypress Semiconductor Corp is an asynchronous SRAM memory IC with a 2Mbit volatile storage array organized as 128K x 16. It uses a parallel memory interface and a 48-VFBGA (6x8) surface-mount package. The device operates from a 2.2 V to 3.6 V supply and over an ambient temperature range of -40 °C to 85 °C. Its 45 ns access time and 45 ns write cycle time are relevant to memory subsystems that use a parallel SRAM interface.

Key Features

• 2Mbit volatile SRAM memory array
• 128K x 16 memory organization
• Parallel memory interface
• 45 ns access time
• 45 ns write cycle time for word and page operations
• 2.2 V to 3.6 V supply voltage range
• -40 °C to 85 °C ambient operating temperature range
• 48-VFBGA (6x8) surface-mount package

Applications

• volatile working memory in embedded systems using a parallel memory bus
• temporary buffering of measurement or control data
• local data storage in communication subsystems requiring 2Mbit of parallel SRAM

Design & Procurement Notes

Design review should confirm that the host interface supports a parallel SRAM bus and the 45 ns timing parameters for read and write operations. The 128K x 16 organization determines the address and data width requirements. Board layout should provide a 2.2 V to 3.6 V supply and accommodate the 48-VFBGA (6x8) surface-mount footprint. Environmental assumptions should be checked against the -40 °C to 85 °C ambient operating range. For procurement, use the exact Cypress Semiconductor Corp part number CY62136FV30LL-45BVXI to avoid substitution errors.