CY62127DV30LL-70BVXI

Product Overview

The CY62127DV30LL-70BVXI is a Cypress Semiconductor Corp SRAM memory integrated circuit for volatile data storage using a parallel interface. It provides 1 Mbit of storage organized as 64K x 16, with asynchronous access timing specified at 70 ns. The device operates from a 2.2 V to 3.6 V supply and is supplied in a 48-VFBGA surface-mount package with a 6 x 8 body footprint.

Key Features

• Volatile SRAM memory format with asynchronous operation
• 1 Mbit capacity organized as 64K x 16 for parallel word access
• Parallel memory interface
• 70 ns access time and 70 ns write cycle time
• 2.2 V to 3.6 V supply voltage range
• Operating temperature range of -40°C to 85°C (TA)
• Surface-mount 48-VFBGA package, 6 x 8 body size

Applications

• Embedded controllers using parallel SRAM for temporary data buffering
• 3.3 V class systems needing volatile memory with 70 ns access
• Compact board designs using surface-mount BGA memory
• Temperature-sensitive embedded assemblies operating within -40°C to 85°C (TA)

Design & Procurement Notes

For board design, account for the 48-VFBGA (6x8) surface-mount footprint and parallel bus routing. The 2.2 V to 3.6 V supply range supports 3.3 V class systems, while the -40°C to 85°C (TA) operating range should be checked against the ambient conditions of the final assembly. Because the memory is volatile and asynchronous, system timing budgets should be based on the 70 ns access and write cycle time, and data retention requirements should be addressed outside the device. The 64K x 16 organization should be mapped to the processor or controller address and data bus structure.