K2968
The 2SK2968 (K2968) is a 900V N-channel power MOSFET from Toshiba, designed for switching power supplies, DC-DC converters, relay drivers, and motor drive applications. It features low ON-resistance and high avalanche capability
- 製品カテゴリ
- MOSFET
- パッケージ
- TO-3P
- 在庫
- 1,500 pcs
- 供給状況
- 現在の数量は確認が必要です。
製品属性
| メーカー | Toshiba Semiconductor and Storage |
|---|---|
| 製品カテゴリ | MOSFET |
| Applications | SMPS, DC-DC Converters, Relay Drivers, Motor Drives |
| Avalanche Energy (EAS) | 810 mJ |
| Continuous Drain Current (Id) | 10 A |
| Device Type | N-Channel Power MOSFET |
| Drain-Source On-Resistance (RDS(on)) | 1.05 Ω Typ., 1.25 Ω Max |
| Drain-source voltage (Vdss) | 900 V |
| Forward Transfer Admittance (Yfs) | 7.6 S Typ. |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V |
| Gate-Source Voltage (VGSS) | ±30 V |
| Input Capacitance (Ciss) | 2150 pF Typ. |
| Leakage Current (IDSS) | 100 µA max |
| Mounting Type | Through Hole |
| Operating Junction Temperature | -55°C to +150°C |
| Package Type | TO-3P(N) / SC-65 |
| Power Dissipation (Pd) | 150 W |
| Product status | EOL (End of Life) |
| Pulsed Drain Current (IDP) | 30 A |
| RoHS Compliant | Yes |
| Technology | π-MOS III |
| Total Gate Charge (Qg) | 70 nC Typ. |
| データシート | データシートを依頼 |
調達概要
K2968 の主要な供給・購買情報です。
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K2968 の詳細説明
Product Overview
K2968 (2SK2968) is a high-voltage N-channel power MOSFET manufactured by Toshiba Semiconductor. The device uses Toshiba π-MOS III technology and features a 900V drain-source voltage rating, 10A continuous drain current capability and low drain-source on-resistance. Designed for high-voltage switching applications, K2968 provides reliable switching performance and rugged avalanche characteristics, making it suitable for switching power supplies, DC-DC converters, relay drivers and motor control applications. :contentReference[oaicite:0]{index=0}
Key Features
Manufacturer: Toshiba Semiconductor
Part Number: K2968 / 2SK2968
Device Type: N-Channel Power MOSFET
Product Category: Discrete Semiconductor / Power Transistor
Technology: π-MOS III MOSFET Technology
Polarity: N-Channel
Drain-Source Voltage (VDSS): 900V
Drain-Source Gate Voltage (VDGR): 900V
Continuous Drain Current (ID): 10A
Pulsed Drain Current (IDP): 30A
Drain-Source On Resistance (RDS(on)): 1.25Ω Maximum
Typical RDS(on): 1.05Ω
Gate-Source Voltage (VGSS): ±30V
Forward Transfer Admittance (|Yfs|): 7.6S Typical
Input Capacitance (Ciss): 2150pF Typical
Single Pulse Avalanche Energy: 810mJ
Repetitive Avalanche Energy: 15mJ
High Voltage Switching Capability
Enhancement Mode MOSFET
Low Leakage Current Characteristics
High Avalanche Ruggedness
Fast Switching Performance
Maximum Power Dissipation: 150W
Operating Junction Temperature: -55°C to +150°C
Package Type: TO-3P(N)
Mounting Type: Through-Hole
Application Type: High Voltage Power Switching
Typical Applications: Switching Power Supplies, DC-DC Converters, Relay Drivers, Motor Drives and Industrial Power Equipment
Product Status: Legacy / End-of-Life Industrial Component
Replacement Note: Verify voltage rating, current capability, RDS(on), package type and switching parameters before replacement.
Applications
K2968 is designed for high-voltage switching systems requiring reliable MOSFET operation and strong avalanche performance. Typical applications include offline switching power supplies, DC-DC converters, industrial control equipment, relay drive circuits, motor drive systems and legacy electronic equipment repair. :contentReference[oaicite:1]{index=1}
Quality & Sourcing
Antrex Electronics provides K2968 sourcing support including inventory verification, RFQ quotation, manufacturer authentication, package confirmation, date code inspection and shipment coordination. OEMs, EMS providers, industrial equipment manufacturers and electronic component buyers are welcome to submit BOM lists or obsolete semiconductor sourcing requirements.
Quality inspection services include product photos, marking verification, visual inspection and third-party testing support when required to ensure reliable component supply.
Datasheet
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