K20E60W
The K20E60W (marking of TK20E60W) is a 600V N-channel DTMOS IV power MOSFET from Toshiba, designed for high-efficiency switching applications such as switching power supplies and voltage regulators
- 製品カテゴリ
- MOSFET
- パッケージ
- TO220
- 在庫
- 1,500 pcs
- 供給状況
- 現在の数量は確認が必要です。
製品属性
| メーカー | Toshiba Semiconductor and Storage |
|---|---|
| 製品カテゴリ | MOSFET |
| Applications | Switching Power Supplies, AC-DC Converters, Voltage Regulators, Industrial Power Systems |
| Continuous Drain Current (Id) | 20 A |
| Drain-Source On Resistance (RDS(on)) | 155 mΩ max @ VGS=10V |
| Drain-source voltage (Vdss) | 600 V |
| Gate Threshold Voltage (Vth) | 2.7 V to 3.7 V |
| Gate-Source Voltage (VGSS) | ±30 V |
| Input Capacitance (Ciss) | 1680 pF typ. |
| Marking Code | K20E60W |
| MOSFET Type | N-Channel Enhancement Mode |
| Mounting Type | Through Hole |
| Operating Temperature Range | -55°C to +150°C |
| Package Configuration | Single MOSFET |
| Package Type | TO-220 |
| Power Dissipation (Pd) | 165 W |
| Product Type | Power MOSFET |
| Pulsed Drain Current (IDP) | 80 A |
| Reverse Recovery Charge (Qrr) | 2900 nC typ. |
| Reverse Recovery Time (trr) | 330 ns typ. |
| RoHS Status | ROHS compliant |
| Single Pulse Avalanche Energy (EAS) | 200 mJ |
| Technology | DTMOS IV Super Junction MOSFET |
| Total Gate Charge (Qg) | 48 nC typ. |
| Typical RDS(on) | 130 mΩ |
| データシート | データシートを依頼 |
調達概要
K20E60W の主要な供給・購買情報です。
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K20E60W の詳細説明
Product Overview
K20E60W is a high-voltage N-channel power MOSFET manufactured by Toshiba Semiconductor. The device is based on Toshiba DTMOS IV technology and features a 600V drain-source voltage rating, 20A continuous drain current capability and low conduction losses. Designed for high-efficiency power switching applications, K20E60W is suitable for switching power supplies, power converters, industrial equipment and voltage regulator circuits. :contentReference[oaicite:0]{index=0}
Key Features
Manufacturer: Toshiba Semiconductor
Part Number: K20E60W
Device Type: N-Channel Power MOSFET
Product Category: Discrete Semiconductor / Power Transistor
Technology: DTMOS IV MOSFET Technology
Polarity: N-Channel
Drain-Source Voltage (VDSS): 600V
Continuous Drain Current (ID): 20A
Drain-Source On Resistance (RDS(on)): Low Resistance Design
Gate-Source Voltage (VGS): ±30V
High Voltage Switching Capability
Low Switching Loss Performance
Low Gate Charge Characteristics
Fast Switching Operation
High Avalanche Ruggedness
Low Power Loss Design
High Efficiency Power Conversion Support
Single MOSFET Configuration
Operating Temperature Range: -55°C to +150°C
Maximum Power Dissipation: Approximately 165W
Package Type: TO-220
Mounting Type: Through-Hole
RoHS Compliant Version Available
Application Type: High Voltage Power Switching
Typical Applications: Switching Power Supplies, AC-DC Converters, DC-DC Converters, Industrial Power Systems, Voltage Regulators and Inverter Circuits
Product Status: Active / Industrial Power Component
Replacement Note: Verify voltage rating, current capability, RDS(on), package type and switching characteristics before replacement.
Applications
K20E60W is designed for high-voltage switching applications requiring efficient power conversion and reliable electrical performance. Typical applications include switched-mode power supplies, industrial converters, inverter equipment, power regulators and other high-frequency switching systems. :contentReference[oaicite:1]{index=1}
Quality & Sourcing
Antrex Electronics provides K20E60W sourcing support including inventory verification, RFQ quotation, manufacturer authentication, package confirmation, date code inspection and shipment coordination. OEMs, EMS providers, industrial equipment manufacturers and electronic component buyers are welcome to submit BOM lists or power semiconductor sourcing requirements.
Quality inspection services include product photos, marking verification, visual inspection and third-party testing support when required to ensure reliable component supply.
Datasheet
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