CY7C1069DV33-10ZSXI

Product Overview

The CY7C1069DV33-10ZSXI from Cypress Semiconductor Corp is a volatile SRAM integrated circuit intended for parallel memory expansion in electronic assemblies. It provides 16 Mbit of storage organized as 2M x 8 and uses an asynchronous parallel interface. The device operates from a 3 V to 3.6 V supply and is specified for a 10 ns access time, with a 10 ns write cycle time for word or page operations. It is supplied in a surface-mount 54-TSOP II package with a 10.16 mm body width, and supports an operating temperature range of -40°C to 85°C ambient.

Key Features

• 16 Mbit volatile SRAM with 2M x 8 organization
• Parallel asynchronous memory interface for bus-connected microcontroller or FPGA designs
• 10 ns access time and 10 ns word/page write cycle time
• 3 V to 3.6 V supply voltage
• Surface-mount 54-TSOP II package, 10.16 mm width
• -40°C to 85°C ambient operating temperature range

Applications

• Memory expansion in embedded controllers that require a parallel address and data bus
• Temporary data buffering in measurement or instrumentation modules
• Local data staging in processor or FPGA subsystems

Design & Procurement Notes

When selecting the CY7C1069DV33-10ZSXI, confirm that the system power rail is within 3 V to 3.6 V and that the memory bus can accommodate an asynchronous parallel SRAM with 2M x 8 addressing. The 10 ns access and write timing should be checked against the controller or FPGA interface. The surface-mount 54-TSOP II footprint with 10.16 mm width should be verified during PCB layout, and the -40°C to 85°C ambient range should be matched to the intended operating environment.