CY62137CV18LL-55BAI

Product Overview

The CY62137CV18LL-55BAI from Cypress Semiconductor Corp is a volatile SRAM memory IC with 2Mbit capacity and 128K x 16 organization. It uses a parallel interface and asynchronous SRAM technology, with 55 ns access time and 55 ns write cycle time for word and page operations. The device operates from a 1.65 V to 1.95 V supply and is specified for an operating temperature range of -40°C to 85°C (TA). It is a surface-mount memory IC in a 48-TFBGA / 48-FBGA (7x7) package.

Key Features

• 2Mbit volatile SRAM organized as 128K x 16 with a parallel interface
• Asynchronous SRAM technology with 55 ns access time and 55 ns write cycle time for word and page operations
• 1.65 V to 1.95 V supply voltage range
• Operating temperature range of -40°C to 85°C (TA)
• Surface-mount 48-TFBGA / 48-FBGA (7x7) package

Applications

• Embedded systems that use a parallel SRAM buffer for temporary data storage
• Microcontroller-based designs that require 128K x 16 memory expansion through a parallel bus
• Data-holding circuits in systems operating from a 1.65 V to 1.95 V supply and within -40°C to 85°C (TA)

Design & Procurement Notes

When selecting the CY62137CV18LL-55BAI, confirm that the host controller can address a 128K x 16 parallel SRAM and that the system supply remains within 1.65 V to 1.95 V. The 55 ns access time and 55 ns word/page write cycle time should be checked against the controller timing requirements. Layout and assembly should accommodate the surface-mount 48-TFBGA / 48-FBGA (7x7) package, and the operating temperature range of -40°C to 85°C (TA) should be considered for the target environment.