CY62128EV30LL-45ZXI

Product Overview

The CY62128EV30LL-45ZXI from Cypress Semiconductor Corp is a volatile SRAM memory device in the MOBL series. It provides a 1 Mbit memory array organized as 128K x 8 and uses a parallel memory interface. The device has a 45 ns access time and a 45 ns write cycle time for word and page operations. It operates from a 2.2 V to 3.6 V supply and is packaged in a 32-TSOP I surface-mount package, with a 32-TFSOP case width of 0.724 in (18.40 mm). The operating temperature range is -40°C to 85°C (TA).

Key Features

• 1 Mbit volatile SRAM organized as 128K x 8
• Parallel memory interface with 45 ns access time
• 45 ns write cycle time for word and page operations
• 2.2 V to 3.6 V supply voltage range
• 32-TSOP I surface-mount package, 32-TFSOP 0.724 in (18.40 mm) width
• Operating temperature range of -40°C to 85°C (TA)

Applications

• Embedded systems requiring a parallel SRAM array for local volatile data storage
• Microprocessor-based control platforms needing temporary data buffering
• Instrumentation or test equipment designs using a 1 Mbit memory block

Design & Procurement Notes

When selecting this Cypress Semiconductor Corp SRAM for a design, verify that the system bus can meet the 45 ns access and write-cycle timing requirements and that the supply voltage remains within 2.2 V to 3.6 V. The 128K x 8 organization and parallel interface should match the memory mapping and address/data width of the target controller. For layout, confirm the 32-TSOP I surface-mount footprint, including the 32-TFSOP 0.724 in (18.40 mm) width, and ensure the expected ambient temperature stays within the -40°C to 85°C (TA) range.